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94669a727 Folha de dados (PDF) - Cree, Inc

94669a727 Datasheet PDF - Cree, Inc
Nome de Peças 94669a727
Download  94669a727 Download

Tamanho do Arquivo   482.43 Kbytes
página   2 Pages
Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc
Descrição Electrónicos CREE Silicon Carbide MOSFET Evaluation Kit

94669a727 Datasheet (PDF)

Go To PDF Page Download Folha de dados
94669a727 Datasheet PDF - Cree, Inc

Nome de Peças 94669a727
Download  94669a727 Click to download

Tamanho do Arquivo   482.43 Kbytes
página   2 Pages
Fabricante Electrônico  CREE [Cree, Inc]
Página de início  http://www.cree.com/
Logo CREE - Cree, Inc
Descrição Electrónicos CREE Silicon Carbide MOSFET Evaluation Kit

94669a727 Folha de dados (HTML) - Cree, Inc

94669a727 Datasheet HTML 1Page - Cree, Inc 94669a727 Datasheet HTML 2Page - Cree, Inc

94669a727 Detalhes do produto

Description:
This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers and power supplies and all the other components needed to quickly assemble the half bridge power stage . The basic block diagram and specifications are shown below. The assembly can be easily configured for severa topologies from the basic phase-leg configuration to several other common topologies as shown in the nex section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation kits.

Features:
• Includes all the power stage parts needed to quickly assemble a CREE MOSFET and diode based power converter and get started with SiC devices.
• Easy to use assembly to evaluate CREE MOSFET and Diode performance in a half bridge circuit.
• Easily configurable to different power conversion topologies such as Buck or Boost configurations.
• Easy access to critical test points for measurement including VGS, VDS and IDS.
• Good layout example for properly driving MOSFET and diode with minimal ringing.
• Gate drive schematic and layout reference for a TO-247 packaged CREE MOSFET.
• Comparative testing between CREE devices and IGBTs.




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Sobre a Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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