FEATURES
• For general purpose applications
• These diodes features very low turn-on voltage and fast switching. These
   devices are protected by a PN junction guard ring against excessive
   voltage, such as electrostatic discharges.
• Metal-on- silicon Schottky barrier device which is protected by a
   PN junction guard ring. The low forward voltage drop and fast switching
   make it ideal for protection of MOS devices, steering, biasing and
   coupling diodes for fast switching and low logic level applications
• This diode is also available in the MiniMELF case with the type designation LL86.
• High temperature soldering guaranteed: 260°C/10 seconds at terminals 
• Component in accordance to RoHS 2011/65/EU

MECHANICAL DATA
• Case : DO-35 glass case
• Polarity: Color band denotes cathode end
• Weight : Approx. 0.13 gram