Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Features
• Very tight variation of on-resistance vs. temperature
• Slight variation of switching losses vs. temperature
• Very high operating temperature capability (200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Easy to drive

Applications
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies