2SC5751 Folha de dados(PDF) - California Eastern Labs

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2SC5751 Folha de dados (PDF) - California Eastern Labs

2SC5751 Datasheet PDF - California Eastern Labs


Nome de Peças	2SC5751

Download	2SC5751 Download

Tamanho do Arquivo	3662.6 Kbytes

página	16 Pages

Fabricante Electrônico	CEL [California Eastern Labs]

Página de início	http://www.cel.com

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Descrição Electrónicos

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

2SC5751 Datasheet (PDF)

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Download Folha de dados

2SC5751 Datasheet PDF - California Eastern Labs


Nome de Peças	2SC5751

Download	2SC5751 Click to download

Tamanho do Arquivo	3662.6 Kbytes

página	16 Pages

Fabricante Electrônico	CEL [California Eastern Labs]

Página de início	http://www.cel.com

Logo

Descrição Electrónicos	MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

2SC5751 Folha de dados (HTML) - California Eastern Labs

2SC5751 Datasheet HTML 1Page - California Eastern Labs

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2SC5751 Datasheet HTML 7Page - California Eastern Labs

2SC5751 Datasheet HTML 8Page - California Eastern Labs

2SC5751 Datasheet HTML 9Page - California Eastern Labs

2SC5751 Datasheet HTML 10Page - California Eastern Labs

2SC5751 Detalhes do produto

NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package

Nº de peça semelhante - 2SC5751

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	2SC5751	216Kb / 18P	NPN SILICON RF TRANSISTOR 2001
	2SC5751-T2	216Kb / 18P	NPN SILICON RF TRANSISTOR 2001
	2SC5751	217Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

Descrição semelhante - 2SC5751

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Panasonic Semiconductor	2SC4545	81Kb / 4P	For Medium Output Power Amplification
Panasonic Semiconductor	2SD0638	73Kb / 3P	For Medium-Power General Amplification
NEC	2SC5752	91Kb / 20P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
Renesas Technology Corp	NESG2101M05	172Kb / 15P	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
California Eastern Labs	2SC5752	3Mb / 17P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
Renesas Technology Corp	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD
	2SC5751	217Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
	2SC5753	224Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION July 2001

Sobre a California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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