Description
The IH401A is made up of 4 monolithically constructed combinations of varacitor type diode and a N-Channel JFET. The JFET itself is very similar to the popular 2N4391, and the driver diode is specially designed, such that its capacitance is a strong function of the voltage across it. The driver diode is electrically in series with the gate of the N-Channel FET and simulates a back-to-back diode structure. This structure is needed to prevent forward biasing the source-to-gate or drain-to-gate junctions of the JFET when used in switching applications.

Features
• rDS(ON) (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35Ω
• ID(OFF) (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10pA
• Switching Times (RL = 1kΩ)
    - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25ns
    - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75ns
• Built-In Overvoltage Protection . . . . . . . . . . . . . . ±25V
• Charge Injection Error (Typ) into 0.01µF Capacitor . . 3mV
• CISS (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <1pF
• Can Be Used for Hybrid Construction