Product Overview
The 0.25 µ 3 Volt Intel StrataFlash memory family contains high-density memories organized as 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organized as one-hundred-twenty-eight 128-Kbyte (131,072 bytes) erase blocks. The 64-Mbit device is organized as sixty-four 128-Kbyte erase blocks while the 32-Mbits device contains thirty-two 128-Kbyte erase blocks. Blocks are selectively and individually lockable and unlockable in system. A 128-bit protection register has multiple uses, including unique flash device identification.

Product Features
■ High-Density Symmetrically-Blocked Architecture
   —128 128-Kbyte Erase Blocks (128 M)
   —64 128-Kbyte Erase Blocks (64 M)
   —32 128-Kbyte Erase Blocks (32 M)
■ High Performance Interface Asynchronous Page Mode Reads
   —110/25 ns Read Access Time (32 M)
   —120/25 ns Read Access Time (64 M)
   —150/25 ns Read Access Time (128 M)
■ 2.7 V–3.6 V VCC Operation
■ 128-bit Protection Register
   —64-bit Unique Device Identifier
   —64-bit User Programmable OTP Cells
■ Enhanced Data Protection Features
   Absolute Protection with VPEN = GND
   —Flexible Block Locking
   —Block Erase/Program Lockout during Power Transitions
■ Packaging
   —56-Lead TSOP Package
   —64-Ball Intel® Easy BGA Package
■ Cross-Compatible Command Support Intel Basic Command Set
   —Common Flash Interface
   —Scalable Command Set
■ 32-Byte Write Buffer
   —6 µs per Byte Effective Programming Time
■ 12.8M Total Min. Erase Cycles (128 Mbit)
   6.4M Total Min. Erase Cycles (64 Mbit)
   3.2M Total Min. Erase Cycles (32 Mbit)
   —100K Minimum Erase Cycles per Block
■ Automation Suspend Options
   —Block Erase Suspend to Read
   —Block Erase Suspend to Program
   —Program Suspend to Read
■ 0.25 µ Intel® StrataFlash™ Memory Technology