Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after-sale. The 28F020 increases memory flexibility, while contributing to time-and cost-savings.

■ Flash Electrical Chip-Erase
    — 2 Second Typical Chip-Erase
■ Quick-Pulse Programming Algorithm
    — 10 ms Typical Byte-Program
    — 4 Second Chip-Program
■ 100,000 Erase/Program Cycles
■ 12.0V g5% VPP
■ High-Performance Read
    — 70 ns Maximum Access Time
■ CMOS Low Power Consumption
    — 10 mA Typical Active Current
    — 50 mA Typical Standby Current
    — 0 Watts Data Retention Power
■ Integrated Program/Erase Stop Timer
■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
■ Noise Immunity Features
    — g10% VCC Tolerance
    — Maximum Latch-Up Immunity through EPI Processing
■ ETOXTM Nonvolatile Flash Technology
    — EPROM-Compatible Process Base
    — High-Volume Manufacturing Experience
■ JEDEC-Standard Pinouts
    — 32-Pin Plastic Dip
    — 32-Lead PLCC
    — 32-Lead TSOP
        (See Packaging Spec., Order Ý231369)
■ Extended Temperature Options