DESCRIPTION
The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES
• Push-pull type N-channel GaAs MES FET
• High output power: Pout = 50 W TYP.
• High linear gain: GL = 10.5 dB TYP.
• High power added efficiency: ηadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz