DESCRIPTION
The BFXS9 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fr, low reverse capacitance, excellent cross modulation properties andvery low noiseperformance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment.

◾ SILICON PLANAR EPITAXIAL TRANSISTORS
◾ TO-72 METAL CASE
◾ VERY LOW NOISE

APPLICATIONS :
▪ TELECOMMUNICATIONS
▪ WIDE BAND UHF AMPLIFIER
▪ RADIO COMMUNICATIONS