TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.3 OHM

P–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FETis designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls,these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature