Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Renesas Technology Corp |
2SC5761
|
305Kb / 16P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION
May 2003 |
NESG2031M05
|
158Kb / 14P |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
California Eastern Labs |
NESG2046M33
|
292Kb / 4P |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
NESG204619
|
320Kb / 4P |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC |
NESG2046M33
|
118Kb / 3P |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
NESG210719
|
114Kb / 3P |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NESG204619
|
116Kb / 3P |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
Renesas Technology Corp |
NESG3032M14
|
168Kb / 15P |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
NESG3033M14
|
176Kb / 16P |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
NESG210719
|
124Kb / 10P |
NPN SiGe RF Transistor for Low Noise, High-Gain
|