| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Renesas Technology Corp |
RJK0852DPB
|
108Kb / 7P |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK0853DPB
|
108Kb / 7P |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK1052DPB
|
106Kb / 7P |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK1054DPB
|
136Kb / 7P |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
|
RJK0856DPB
|
154Kb / 7P |
80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK0851DPB
|
108Kb / 7P |
80V, 20A, 23m??max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK0853DPB
|
108Kb / 7P |
80V, 40A, 8.0m??max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK1052DPB
|
106Kb / 7P |
100V, 20A, 20m??max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK1054DPB
|
136Kb / 7P |
100V, 20A, 22m??max. Silicon N Channel Power MOS FET Power Switching
|
|
RJK0856DPB
|
153Kb / 7P |
80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching
Apr 11, 2013 |