184PC15GT Folha de dados(PDF) - Honeywell Solid State Electronics Center

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184PC15GT Folha de dados (PDF) - Honeywell Solid State Electronics Center

184PC15GT Datasheet PDF - Honeywell Solid State Electronics Center


Nome de Peças	184PC15GT

Download	184PC15GT Download

Tamanho do Arquivo	494.32 Kbytes

página	5 Pages

Fabricante Electrônico	HONEYWELL [Honeywell Solid State Electronics Center]

Página de início	http://honeywell.com/Pages/Home.aspx

Logo

Descrição Electrónicos

Pressure Sensors Miniature Absolute, Differential, Gage/Amplified

184PC15GT Datasheet (PDF)

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Download Folha de dados

184PC15GT Datasheet PDF - Honeywell Solid State Electronics Center


Nome de Peças	184PC15GT

Download	184PC15GT Click to download

Tamanho do Arquivo	494.32 Kbytes

página	5 Pages

Fabricante Electrônico	HONEYWELL [Honeywell Solid State Electronics Center]

Página de início	http://honeywell.com/Pages/Home.aspx

Logo

Descrição Electrónicos	Pressure Sensors Miniature Absolute, Differential, Gage/Amplified

184PC15GT Folha de dados (HTML) - Honeywell Solid State Electronics Center

184PC15GT Datasheet HTML 1Page - Honeywell Solid State Electronics Center

184PC15GT Datasheet HTML 2Page - Honeywell Solid State Electronics Center

184PC15GT Datasheet HTML 3Page - Honeywell Solid State Electronics Center

184PC15GT Datasheet HTML 4Page - Honeywell Solid State Electronics Center

184PC15GT Datasheet HTML 5Page - Honeywell Solid State Electronics Center

184PC15GT Detalhes do produto

Pressure Sensors Miniature Absolute, Differential, Gage/Amplified

FEATURES
● Miniature plastic package
● Terminal and housing mount styles
● PCB termination
● Fully signal conditioned

Nº de peça semelhante - 184PC15GT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Illinois Capacitor, Inc...	184PSB302K2J	433Kb / 11P	Power semiconductor module protection - High pulse and rms current ??Multiple Leads
Illinois Capacitor, Inc...	184PSB302K4J	433Kb / 11P	Power semiconductor module protection - High pulse and rms current ??Multiple Leads

Descrição semelhante - 184PC15GT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
List of Unclassifed Man...	141PC01G	515Kb / 4P	Absolute, Differential, Gage, Vacuum Gage/Amplified
Sensortechnics GmbH	HCA0611ARG8	85Kb / 6P	Miniature amplified barometric pressure sensors
	HCE0611ABE8P3	148Kb / 11P	Miniature amplified pressure sensors
	HCLA02X5DB	191Kb / 15P	Miniature amplified low pressure sensors
Honeywell Solid State E...	163PC01D75	507Kb / 5P	Pressure Sensors Low Pressure Differential, Gage, Vacuum Gage/Amplified
TE Connectivity Ltd	1220	173Kb / 5P	Gage, Absolute, and Differential
Sensortechnics GmbH	HCA0611ARH8	113Kb / 7P	Miniature amplified barometric pressure sensors
	HCEM010-B	182Kb / 11P	Miniature amplified pressure sensors
	HCLA02X5-B	226Kb / 15P	Miniature amplified low pressure sensors
All Sensors Corporation	DS-0103	50Kb / 5P	Miniature Amplified Pressure Sensors Rev A

Sobre a Honeywell Solid State Electronics Center

Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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