H4946S Folha de dados(PDF) - Hi-Sincerity Mocroelectronics

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H4946S Folha de dados (PDF) - Hi-Sincerity Mocroelectronics

H4946S Datasheet PDF - Hi-Sincerity Mocroelectronics


Nome de Peças	H4946S

Download	H4946S Download

Tamanho do Arquivo	236.98 Kbytes

página	5 Pages

Fabricante Electrônico	HSMC [Hi-Sincerity Mocroelectronics]

Página de início	http://www.hsmc.com.tw

Logo

Descrição Electrónicos

N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)

H4946S Datasheet (PDF)

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H4946S Datasheet PDF - Hi-Sincerity Mocroelectronics


Nome de Peças	H4946S

Download	H4946S Click to download

Tamanho do Arquivo	236.98 Kbytes

página	5 Pages

Fabricante Electrônico	HSMC [Hi-Sincerity Mocroelectronics]

Página de início	http://www.hsmc.com.tw

Logo

Descrição Electrónicos	N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)

H4946S Folha de dados (HTML) - Hi-Sincerity Mocroelectronics

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H4946S Detalhes do produto

Description
The Advanced Power MOSFETS provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness

Features
• RDS(on)<41mΩ@VGS=10V, ID=5.0A
• RDS(on)<55mΩ@VGS=4.5V, ID=2.5A
• Low On-resistance
• Fast Switching Speed
• SOP-8 Package
8-Lead Plastic DIP-8
8-Lead Plastic SO-8

Nº de peça semelhante - H4946S

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mercury United Electron...	H49	115Kb / 1P	Thru - Hole Crystals
Tyco Electronics	H4910RAAA	196Kb / 4P	Type HOLCO Series
	H4910RAAB	196Kb / 4P	Type HOLCO Series
	H4910RAAD	196Kb / 4P	Type HOLCO Series
	H4910RABA	196Kb / 4P	Type HOLCO Series

Descrição semelhante - H4946S

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	UP9971	211Kb / 4P	5A, 60V N-CHANNEL POWER MOSFET
Jiangsu Donghai Semicon...	830	1Mb / 12P	5A 500V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semicon...	830WB	1Mb / 12P	5A 500V N-channel Enhancement Mode Power MOSFET
Guangdong Youtai Semico...	20N06	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET
	30N06	1Mb / 7P	60V N-Channel Enhancement Mode Power MOSFET
	40N06	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET
	50N06	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET
	IRLR2905TR	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET
	STD30NF06L	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET
	STD35NF06	1Mb / 6P	60V N-Channel Enhancement Mode Power MOSFET

Sobre a Hi-Sincerity Mocroelectronics

Hi-Sincerity Microelectronics is a semiconductor company based in Taiwan that designs and manufactures a wide range of analog and mixed-signal integrated circuits (ICs) for various applications. The company was founded in 1998 and has since become a leading provider of analog ICs in Asia.

Hi-Sincerity's product portfolio includes power management ICs, audio amplifiers, LED drivers, motor controllers, and other analog and mixed-signal ICs. The company's products are used in a variety of end markets, including consumer electronics, automotive, industrial, and communication systems.

One of Hi-Sincerity's strengths is its ability to develop customized solutions for customers with specific requirements. The company has a team of experienced engineers who work closely with customers to understand their needs and develop tailored solutions that meet their specifications.

In addition to its design and development capabilities, Hi-Sincerity also has strong manufacturing capabilities. The company operates a modern semiconductor fabrication facility in Taiwan that is capable of producing a wide range of analog and mixed-signal ICs using advanced process technologies.

Hi-Sincerity is committed to quality and reliability, and its products are widely recognized for their performance and reliability. The company has received numerous awards and certifications for its quality management systems and environmental management systems, including ISO 9001, ISO 14001, and IATF 16949.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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