Description

The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Features

16K bit Ferroelectric Nonvolatile RAM

• Organized as 2,048 x 8 bits

• High Endurance 1014 Read/Writes

• 38 year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

• Up to 1MHz Maximum Bus Frequency

• Direct Hardware Replacement for EEPROM

• Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

• 2.7 - 3.65V Operation

• 100 A Active Current (100 kHz)

• 3 A (typ.) Standby Current

Industry Standard Configuration

• Industrial Temperature -40 C to +85 C

• 8-pin “Green”/RoHS SOIC and TDFN Packages