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SST28SF040A Folha de dados (PDF) - Silicon Storage Technology, Inc

SST28SF040A Datasheet PDF - Silicon Storage Technology, Inc
Nome de Peças SST28SF040A
Download  SST28SF040A Download
Tamanho do Arquivo   323.43 Kbytes
página   24 Pages
Fabricante Electrônico  SST [Silicon Storage Technology, Inc]
Página de início  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Descrição Electrónicos 4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A Datasheet (PDF)

Go To PDF Page Download Folha de dados
SST28SF040A Datasheet PDF - Silicon Storage Technology, Inc

Nome de Peças SST28SF040A
Download  SST28SF040A Click to download

Tamanho do Arquivo   323.43 Kbytes
página   24 Pages
Fabricante Electrônico  SST [Silicon Storage Technology, Inc]
Página de início  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
Descrição Electrónicos 4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A Folha de dados (HTML) - Silicon Storage Technology, Inc


SST28SF040A Detalhes do produto

PRODUCT DESCRIPTION
The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.
Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 µs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

FEATURES:
• Single Voltage Read and Write Operations
   – 5.0V-only for SST28SF040A
   – 2.7-3.6V for SST28VF040A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Memory Organization: 512K x8
• Sector-Erase Capability: 256 Bytes per Sector
• Low Power Consumption
   – Active Current: 15 mA (typical) for 5.0V and
      10 mA (typical) for 2.7-3.6V
   – Standby Current: 5 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
   – Byte-Program Time: 35 µs (typical)
   – Sector-Erase Time: 2 ms (typical)
   – Complete Memory Rewrite: 20 sec (typical)
• Fast Read Access Time
   – 5.0V-only operation: 90 and 120 ns
   – 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Hardware and Software Data Protection
   – 7-Read-Cycle-Sequence Software Data
      Protection
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm and 8mm x 20mm)
   – 32-pin PDIP




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Sobre a Silicon Storage Technology, Inc


A Silicon Storage Technology, Inc. (SST) era uma empresa de tecnologia americana especializada no design e fabricação de soluções de memória não volátil, incluindo memória flash e microcontroladores.
A empresa foi fundada em 1991 e teve sua sede em Sunnyvale, Califórnia.
A SST era conhecida por sua tecnologia inovadora e produtos de alta qualidade, e tinha uma forte reputação no setor de memória e armazenamento.
Em 2010, o SST foi adquirido pela Microchip Technology Inc., provedor líder de microcontroladores e semicondutores analógicos.
Hoje, o SST opera como uma subsidiária da Microchip e continua a fornecer soluções de memória não volátil para uma variedade de aplicativos.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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