DESCRIPTION
The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology.

FEATURES
• 524,288 words × 8 bit organization
• CE access time (tCEA): 120 ns (MAX.)
• Cycle time (tRC): 190 ns (MIN.)
• Power supply:
   +3.0 V ± 0.15 V (Operating)
   +2.2 V to +3.15 V (Data retention)
• Power consumption (MAX.):
   126 mW (Operating)
   95 µW (Standby = CMOS input level)
   221 µW (Self-refresh = CMOS input level)
• Available for address refresh,
   auto-refresh, and self-refresh modes
• 2,048 refresh cycles/32 ms
• Address non-multiple
• Not designed or rated as radiation hardened
• Package:
   32-pin, 525-mil SOP
• Package material: Plastic
• Substrate material: P-type silicon
• Process: Silicon-gate CMOS
• Operating temperature: 0 - 70°C