| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 NXP Semiconductors |
PDTB113E
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓
Rev. 02-16 November 2009 |
|
PDTA114E
|
181Kb / 14P |
PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓
2004 Aug 02 |
|
PDTB123E
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
|
PDTB123Y
|
138Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
|
PDTD113E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓
v |
|
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
|
PEMB11
|
144Kb / 8P |
PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓
2003 Oct 03 |
|
PDTD113E
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓
Rev. 02-16 November 2009 |
|
PDTD123Y
|
132Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009 |
 Nexperia B.V. All right... |
PDTA113ZMB
|
628Kb / 13P |
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓
|