General description
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
   supply voltage of 28 V and an IDq of 1000 mA:
   ◆ Average output power = 35.5 W
   ◆ Power gain = 16.5 dB (typ)
   ◆ Efficiency = 30 %
   ◆ IMD3 = -37 dBc
   ◆ ACPR = -40 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
   multi carrier applications in the 1800 MHz to 2000 MHz frequency range