TC551402J Folha de dados(PDF) - Toshiba Semiconductor

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TC551402J Folha de dados (PDF) - Toshiba Semiconductor

TC551402J Datasheet PDF - Toshiba Semiconductor


Nome de Peças	TC551402J

Download	TC551402J Download

Tamanho do Arquivo	343.13 Kbytes

página	7 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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Descrição Electrónicos

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

TC551402J Datasheet (PDF)

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TC551402J Datasheet PDF - Toshiba Semiconductor


Nome de Peças	TC551402J

Download	TC551402J Click to download

Tamanho do Arquivo	343.13 Kbytes

página	7 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

Descrição Electrónicos	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

TC551402J Folha de dados (HTML) - Toshiba Semiconductor

TC551402J Datasheet HTML 1Page - Toshiba Semiconductor

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TC551402J Datasheet HTML 6Page - Toshiba Semiconductor

TC551402J Datasheet HTML 7Page - Toshiba Semiconductor

TC551402J Detalhes do produto

DESCRIPTION
The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 5V power supply.

Nº de peça semelhante - TC551402J

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TC551402J	347Kb / 6P	4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM
	TC551402J-20	347Kb / 6P	4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM
	TC551402J-25	347Kb / 6P	4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM
	TC551402J-30	347Kb / 6P	4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM
	TC551402J	347Kb / 6P	4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Descrição semelhante - TC551402J

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	TC55V1403J	383Kb / 8P	4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
	TC55W1600FT	202Kb / 13P	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55VBM416AFTN55	204Kb / 14P	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
	TC55V4400FT-10	346Kb / 8P	4.194,304-WORD BY 4-BIT CMOS STATIC RAM
	TC55VEM416AXBN55	208Kb / 14P	1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
	TC55W800FT-55	188Kb / 13P	524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
Renesas Technology Corp	M6MGB331S8AKT	127Kb / 3P	33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Technology Corp	M6MGB331S8BKT	128Kb / 3P	33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Toshiba Semiconductor	TC55VCM416BTGN55	238Kb / 18P	1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
Toshiba Semiconductor	TC551402J	347Kb / 6P	4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

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