VDSS = 600 V

ID25 = 18 A

RDS(on) ≤ 0.56 Ω

PDC = 350

Low Capacitance Z-MOSTM MOSFET Process

Optimized for RF Operation

Ideal for Class C, D, & E Applications

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced Z-MOS process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials

Advantages

• High Performance RF Z-MOS™

• Optimized for RF and high speed

• Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

• Isolated Package, no insulator required