HN1C03F Folha de dados(PDF) - Toshiba Semiconductor

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HN1C03F Folha de dados (PDF) - Toshiba Semiconductor

HN1C03F Datasheet PDF - Toshiba Semiconductor


Nome de Peças	HN1C03F

Download	HN1C03F Download

Tamanho do Arquivo	197.48 Kbytes

página	4 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

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Descrição Electrónicos

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

HN1C03F Datasheet (PDF)

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Download Folha de dados

HN1C03F Datasheet PDF - Toshiba Semiconductor


Nome de Peças	HN1C03F

Download	HN1C03F Click to download

Tamanho do Arquivo	197.48 Kbytes

página	4 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

Descrição Electrónicos	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

HN1C03F Folha de dados (HTML) - Toshiba Semiconductor

HN1C03F Datasheet HTML 1Page - Toshiba Semiconductor

HN1C03F Datasheet HTML 2Page - Toshiba Semiconductor

HN1C03F Datasheet HTML 3Page - Toshiba Semiconductor

HN1C03F Datasheet HTML 4Page - Toshiba Semiconductor

HN1C03F Detalhes do produto

For Muting And Switching Applications

Including two devices in SM6 (Super mini type with 6 leads)

High emitter-base voltage: VEBO = 25V (min)

High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Low on resistance: RON = 1Ω (typ.)(IB = 5mA)

Nº de peça semelhante - HN1C03F

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	HN1C03F	307Kb / 5P	Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
	HN1C03F	317Kb / 5P	For Muting And Switching Applications
	HN1C03FU	197Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
	HN1C03FUTE85R	317Kb / 5P	For Muting And Switching Applications
	HN1C03F	307Kb / 5P	Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications

Descrição semelhante - HN1C03F

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	2SC3326	177Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) 17-Dec-1998
	2SC3327	179Kb / 3P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) 27-Nov-1997
	2SC4213	177Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS) 17-Dec-1998
	2SC5232	160Kb / 4P	NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
	HN1C03FU	197Kb / 4P	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
	2SC2878	505Kb / 4P	Silicon NPN Epitaxial Type For Muting and Switching Applications
	2SC3326	512Kb / 5P	Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications 01-Nov-2007
	2SC4213	507Kb / 5P	Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
	RN1441	697Kb / 9P	Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications
	HN1C03F	307Kb / 5P	Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications

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