30J322 Folha de dados(PDF) - Toshiba Semiconductor

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30J322 Folha de dados (PDF) - Toshiba Semiconductor

30J322 Datasheet PDF - Toshiba Semiconductor


Nome de Peças	30J322

Download	30J322 Download

Tamanho do Arquivo	257.08 Kbytes

página	5 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

Descrição Electrónicos

N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)

30J322 Datasheet (PDF)

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Download Folha de dados

30J322 Datasheet PDF - Toshiba Semiconductor


Nome de Peças	30J322

Download	30J322 Click to download

Tamanho do Arquivo	257.08 Kbytes

página	5 Pages

Fabricante Electrônico	TOSHIBA [Toshiba Semiconductor]

Página de início	http://www.semicon.toshiba.co.jp/eng

Logo

Descrição Electrónicos	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)

30J322 Folha de dados (HTML) - Toshiba Semiconductor

30J322 Datasheet HTML 1Page - Toshiba Semiconductor

30J322 Datasheet HTML 2Page - Toshiba Semiconductor

30J322 Datasheet HTML 3Page - Toshiba Semiconductor

30J322 Datasheet HTML 4Page - Toshiba Semiconductor

30J322 Datasheet HTML 5Page - Toshiba Semiconductor

30J322 Detalhes do produto

Discrete IGBTs (PDF:875KB) 03/2011 :
http://toshiba.semicon-storage.com/info/docget.jsp?did=7429

* GT30G124

- Breakdown Voltage VCES(V) @Ta = 25C : 430V

- IGBT Current Rating IC(A) @Ta = 25C : 200A

* GT30J124

- Breakdown Voltage VCES(V) @Ta = 25C : 600V

- IGBT Current Rating IC(A) @Ta = 25C : 200A

Applications and Features : Plasma display panels

Nº de peça semelhante - 30J322

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	30J301	329Kb / 6P	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) 22-Aug-1997
Toshiba Semiconductor	30J311	328Kb / 6P	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) 22-Aug-1997
Ohmite Mfg. Co.	30J33R	236Kb / 3P	High Energy Wirewound

Descrição semelhante - 30J322

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Toshiba Semiconductor	2SK2038	198Kb / 5P	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)
	GT50J322	254Kb / 5P	N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) 17-Nov-1998
	GT60J321	183Kb / 6P	The 4th Generation Soft Switching Applications
	GT60J322	277Kb / 6P	The 4th Generation Soft Switching Applications 18-Jan-2002
	GT30J122	498Kb / 6P	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING 01-Nov-2006
	GT40T301	166Kb / 6P	Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications
	GT50J122	160Kb / 6P	Current Resonance Inverter Switching Application
	GT60J323H	182Kb / 6P	Current Resonance Inverter Switching Application
	GT35J321	290Kb / 6P	Fourth-generation IGBT Current Resonance Inverter Switching Applications
	GT50J328	232Kb / 6P	Current Resonance Inverter Switching Application Fourth Generation IGBT

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