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RFM03U3CT Folha de dados (PDF) - Toshiba Semiconductor
RFM03U3CT Datasheet PDF - Toshiba Semiconductor
Nome de Peças RFM03U3CT
Download  RFM03U3CT Download
Tamanho do Arquivo   175.0 Kbytes
página   4 Pages
Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Descrição Electrónicos Field Effect Transistor Silicon N Channel MOS Type

RFM03U3CT Datasheet (PDF)

Go To PDF Page Download Folha de dados
RFM03U3CT Datasheet PDF - Toshiba Semiconductor

Nome de Peças RFM03U3CT
Download  RFM03U3CT Click to download

Tamanho do Arquivo   175.0 Kbytes
página   4 Pages
Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Descrição Electrónicos Field Effect Transistor Silicon N Channel MOS Type

RFM03U3CT Folha de dados (HTML) - Toshiba Semiconductor


RFM03U3CT Detalhes do produto

VHF- and UHF-band Amplifier Applications

(Note) The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.

• Output power: PO = 3 W (typ.)
• Gain: GP = 15 dB (typ.)
• Drain efficiency: ηD = 60% (typ.)




Nº de peça semelhante - RFM03U3CT

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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Toshiba Semiconductor		 RFM03U3CT TOSHIBA-RFM03U3CT Datasheet
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Descrição semelhante - RFM03U3CT

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674Kb / 9P		 FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE
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