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ST2301MSRG Folha de dados (PDF) - Stanson Technology

ST2301MSRG Datasheet PDF - Stanson Technology
Nome de Peças ST2301MSRG
Download  ST2301MSRG Download

Tamanho do Arquivo   219.29 Kbytes
página   7 Pages
Fabricante Electrônico  STANSON [Stanson Technology]
Página de início  http://www.stansontech.com
Logo STANSON - Stanson Technology
Descrição Electrónicos P Channel Enhancement Mode MOSFET

ST2301MSRG Datasheet (PDF)

Go To PDF Page Download Folha de dados
ST2301MSRG Datasheet PDF - Stanson Technology

Nome de Peças ST2301MSRG
Download  ST2301MSRG Click to download

Tamanho do Arquivo   219.29 Kbytes
página   7 Pages
Fabricante Electrônico  STANSON [Stanson Technology]
Página de início  http://www.stansontech.com
Logo STANSON - Stanson Technology
Descrição Electrónicos P Channel Enhancement Mode MOSFET

ST2301MSRG Folha de dados (HTML) - Stanson Technology

ST2301MSRG Datasheet HTML 1Page - Stanson Technology ST2301MSRG Datasheet HTML 2Page - Stanson Technology ST2301MSRG Datasheet HTML 3Page - Stanson Technology ST2301MSRG Datasheet HTML 4Page - Stanson Technology ST2301MSRG Datasheet HTML 5Page - Stanson Technology ST2301MSRG Datasheet HTML 6Page - Stanson Technology ST2301MSRG Datasheet HTML 7Page - Stanson Technology

ST2301MSRG Detalhes do produto

DESCRIPTION
The ST2301M is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURE
● -20V/-2.8A, RDS(ON) = 130m-ohm (Typ.) @VGS = -4.5V
● -20V/-2.0A, RDS(ON) = 220m-ohm @VGS = -2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design




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