Description
The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.

Features
● Extra high radiant power and radiant intensity
● Suitable for high pulse current operation
● Standard T–1 (ø 5 mm) package
● Angle of half intensity ϕ = ± 12

● Peak wavelength
p = 875 nm
● High reliability
● Good spectral matching to Si photodetectors

Applications
    Infrared remote control and free air transmission systems with high power and long transmission distance requirements in combination with PIN photodiodes or phototransistors.
    Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.