Description
This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ TYPICAL RDS(on) = 0.039 Ω
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE

Applications
■ BATTERY MANAGMENT IN NOMADIC EQUIPMENT
■ POWER MANAGMENT IN CELLULAR PHONES
■ DC MOTOR DRIVE MOSFET ABSOLUTE MAXIMUM RATINGS (G)Pulse width limited by safe operating area. TYPE VDSS RDS(on) ID STS4DNF30L 30 V < 0.050 Ω 4 A