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NGW75T65H3DF Folha de dados (PDF) - Nexperia B.V. All rights reserved
NGW75T65H3DF Datasheet PDF - Nexperia B.V. All rights reserved
Nome de Peças NGW75T65H3DF
Download  NGW75T65H3DF Download
Tamanho do Arquivo   261.58 Kbytes
página   16 Pages
Fabricante Electrônico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de início  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descrição Electrónicos 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode

NGW75T65H3DF Datasheet (PDF)

Go To PDF Page Download Folha de dados
NGW75T65H3DF Datasheet PDF - Nexperia B.V. All rights reserved

Nome de Peças NGW75T65H3DF
Download  NGW75T65H3DF Click to download

Tamanho do Arquivo   261.58 Kbytes
página   16 Pages
Fabricante Electrônico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de início  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descrição Electrónicos 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode

NGW75T65H3DF Folha de dados (HTML) - Nexperia B.V. All rights reserved


NGW75T65H3DF Detalhes do produto

General Description
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring
third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures.
The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching
650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter
applications.
Features and benefits
• Collector current (IC) rated at 75 A
• Low conduction and switching losses
• Stable and tight parameters for easy parallel operation
• Maximum junction temperature of 175 °C
• Fully rated as a soft fast reverse recovery diode
• RoHS compliant, lead-free plating
Applications
• Power inverters
• Uninterruptible Power Supply (UPS) inverter
• Photovoltaic (PV) strings
• EV charging
• Induction heating
• Welding




Nº de peça semelhante - NGW75T65H3DF

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Descrição semelhante - NGW75T65H3DF

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