Description

The  CHA5052  is  a  three-stage   monolithic  high power amplifier.

The  backside  of  the  chip  is  both  RF  and  DC grounds.  This  helps  to  simplify  the  assembly process.

The circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through the substrate.

Main Features

■Broadband performance 7-16GHz

■High gain: 21dB

■ESD protections (see page 10)

■29dBm Output Power @ 1dB compression

■Typical 37dBm 3rd order intercept point

■DC power consumption, 700mA @ 5V