Description
The V29C31004T/V29C31004B is a high speed 524,288 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 3.3 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

Features
■ 512Kx8-bit Organization
■ Address Access Time: 90, 120 ns
■ Single 3.3V ± 0.3 Power Supply
■ Sector Erase Mode Operation
■ 16KB Boot Block (lockable)
■ 1K bytes per Sector, 512 Sectors
   – Sector-Erase Cycle Time: 10ms (Max)
   – Byte-Write Cycle Time: 60µs (Max)
■ Minimum 10,000 Erase-Program Cycles
■ Low power dissipation
   – Active Read Current: 16mA (Typ)
   – Active Program Current: 30mA (Typ)
   – Standby Current: 50µA (Max)
■ Hardware Data Protection
■ Low VCC Program Inhibit Below 2.5V
■ Self-timed write/erase operations with
   end-of-cycle detection
   – DATA Polling
   – Toggle Bit
■ CMOS and TTL Interface
■ Available in two versions
   – V29C31004T (Top Boot Block)
   – V29C31004B (Bottom Boot Block)
■ Packages:
   – 32-pin TSOP-I
   – 32-pin PLCC