General Description
The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells,
the DS28E80 employs a storage cell technology that is
resistant to gamma radiation. The DS28E80 has 248
bytes of user memory that are organized in blocks of
8 bytes. Individual blocks can be write-protected. Each
memory block can be written 8 times. The DS28E80
communicates over the single-contact 1-Wire® bus at
standard speed or overdrive speed. Each device has its
own guaranteed unique 64-bit registration number that is
factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number
acting as node address in the case of a multiple-device
1-Wire network.

Applications
● Identification of Medical Consumables
● Identification and Calibration Medical Tools/Accessories

Features and Benefits
● High Gamma Resistance Allows User-Programmable
Manufacturing or Calibration Data Before Medical
Sterilization
• Resistant Up to 75kGy (kiloGray) of Gamma Radiation
• Reprogrammable 248 Bytes of User Memory
● Lower Block Size Provides Greater Flexibility in
Programming User Memory
• Memory is Organized as 8-Byte Blocks
• Each Block Can Be Written 8 Times
• User-Programmable Write Protection for Individual
Memory Blocks
● Advanced 1-Wire Protocol Minimizes Interface to
Just Single Contact
● Compact Package and Single IO Interface Reduces
Board Space and Enhances Reliability
• Unique Factory-Programmed, 64-Bit Identification
Number
• Communicates at 1-Wire Standard Speed
(15.3kbps max) and Overdrive Speed (76kbps max)
• Operating Range: 3.3V ±10%, -40°C to + 85°C
Reading, 0°C to +50°C Writing
• ±8kV HBM ESD Protection (typ) for IO Pin
• 6-Pin TDFN Package