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IS43TR16640C Folha de dados (PDF) - Integrated Silicon Solution, Inc

IS43TR16640C Datasheet PDF - Integrated Silicon Solution, Inc
Nome de Peças IS43TR16640C
Download  IS43TR16640C Download
Tamanho do Arquivo   4290.92 Kbytes
página   89 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 128MX8, 64MX16 1Gb DDR3 SDRAM

IS43TR16640C Datasheet (PDF)

Go To PDF Page Download Folha de dados
IS43TR16640C Datasheet PDF - Integrated Silicon Solution, Inc

Nome de Peças IS43TR16640C
Download  IS43TR16640C Click to download

Tamanho do Arquivo   4290.92 Kbytes
página   89 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 128MX8, 64MX16 1Gb DDR3 SDRAM

IS43TR16640C Folha de dados (HTML) - Integrated Silicon Solution, Inc


IS43TR16640C Detalhes do produto

FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system
frequency up to 1066 MHz
• 8 internal banks for concurrent operation
• 8n-bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based
on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or
Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C
1.95 μs (8192 cycles/16 ms) Tc= 105°C to 115°C
0.97 μs (8192 cycles/8 ms) Tc= 115°C to 125°C




Nº de peça semelhante - IS43TR16640C

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Descrição semelhante - IS43TR16640C

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Sobre a Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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