Description
The SXESDHC2FD2VB protects sensitive semiconductor components
from damage or upset due to electrostatic discharge (ESD) and other
voltage induced transient events. They feature large cross-sectional area
junctions for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, low
operating voltage.
Feature
300W peak pulse power per line (tP = 8/20μs)
DFN1006-2L package
Replacement for MLV (0402)
Bidirectional configurations
Response time is typically < 1ns
Low clamping voltage
Transient protection for data lines to
IEC61000-4-2(ESD) ±30kV(air), ±30kV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies