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IS67WVE1M16ECLL Folha de dados (PDF) - Integrated Silicon Solution, Inc

IS67WVE1M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc
Nome de Peças IS67WVE1M16ECLL
Download  IS67WVE1M16ECLL Download
Tamanho do Arquivo   902.7 Kbytes
página   34 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 16Mb Async/Page PSRAM

IS67WVE1M16ECLL Datasheet (PDF)

Go To PDF Page Download Folha de dados
IS67WVE1M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc

Nome de Peças IS67WVE1M16ECLL
Download  IS67WVE1M16ECLL Click to download

Tamanho do Arquivo   902.7 Kbytes
página   34 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 16Mb Async/Page PSRAM

IS67WVE1M16ECLL Folha de dados (HTML) - Integrated Silicon Solution, Inc


IS67WVE1M16ECLL Detalhes do produto

Features

Asynchronous and page mode interface

Dual voltage rails for optional performance
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95VBLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6VCLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

Page mode read access
InterpageRead access : 60ns, 70ns
IntrapageRead access : 25ns

Low Power Consumption
Asynchronous Operation < 30 mA
IntrapageRead < 23mA
Standby < 150 μA (max.) at -40°C~85°C
Deep power-down (DPD)
ALL/CLL: < 3μA (Typ)
BLL: < 10μA (Typ)

Low Power Feature
Temperature Controlled Refresh
Partial Array Refresh
Deep power-down (DPD) mode

Operating temperature Range
Industrial: -40°C~85°CAutomotive A1: -40°C~85°C
Automotive A2: -40°C~105°C

Packages: 48-ball TFBGA, 48-pin TSOP-I




Nº de peça semelhante - IS67WVE1M16ECLL

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Descrição semelhante - IS67WVE1M16ECLL

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Sobre a Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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