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IS66WVC4M16ECLL Folha de dados (PDF) - Integrated Silicon Solution, Inc

IS66WVC4M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc
Nome de Peças IS66WVC4M16ECLL
Download  IS66WVC4M16ECLL Download
Tamanho do Arquivo   1889.59 Kbytes
página   68 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 64Mb Async/Page/Burst CellularRAM 1.5

IS66WVC4M16ECLL Datasheet (PDF)

Go To PDF Page Download Folha de dados
IS66WVC4M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc

Nome de Peças IS66WVC4M16ECLL
Download  IS66WVC4M16ECLL Click to download

Tamanho do Arquivo   1889.59 Kbytes
página   68 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 64Mb Async/Page/Burst CellularRAM 1.5

IS66WVC4M16ECLL Folha de dados (HTML) - Integrated Silicon Solution, Inc


IS66WVC4M16ECLL Detalhes do produto

Features
⚫ Single device supports asynchronous , page,
and burst operation
⚫ Mixed Mode supports asynchronous write and
synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Asynchronous mode read access : 70ns
Interpage Read access : 70ns
Intrapage Read access : 25ns
⚫ Burst mode for Read and Write operation
 4, 8, 16,32 or Continuous
⚫ Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 20mA
 Burst operation < 35 mA (@104Mhz)
 Standby < 180 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
⚫ Low Power Feature
 Reduced Array Refresh
 Temperature Controlled Refresh
 Deep power-down (DPD) mode
⚫ Operation Frequency up to 104Mhz
⚫ Operating temperature Range
Industrial: -40°C~85°C
Automotive A1: -40°C~85°C
⚫ Package: 54-ball VFBGA




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Sobre a Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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