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TPS2330ID Folha de dados (PDF) - Texas Instruments

TPS2330ID Datasheet PDF - Texas Instruments
Nome de Peças TPS2330ID
Download  TPS2330ID Download
Tamanho do Arquivo   755.11 Kbytes
página   29 Pages
Fabricante Electrônico  TI2 [Texas Instruments]
Página de início  https://www.ti.com
Logo TI2 - Texas Instruments
Descrição Electrónicos SINGLE HOT-SWAP POWER CONTROLLERS WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING

TPS2330ID Datasheet (PDF)

Go To PDF Page Download Folha de dados
TPS2330ID Datasheet PDF - Texas Instruments

Nome de Peças TPS2330ID
Download  TPS2330ID Click to download

Tamanho do Arquivo   755.11 Kbytes
página   29 Pages
Fabricante Electrônico  TI2 [Texas Instruments]
Página de início  https://www.ti.com
Logo TI2 - Texas Instruments
Descrição Electrónicos SINGLE HOT-SWAP POWER CONTROLLERS WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING

TPS2330ID Folha de dados (HTML) - Texas Instruments


TPS2330ID Detalhes do produto

1FEATURES
• Single-Channel High-Side MOSFET Driver
• Input Voltage: 3 V to 13 V
• Output dV/dt Control Limits Inrush Current
• Circuit-Breaker With Programmable
Overcurrent Threshold and Transient Timer
• Power-Good Reporting With Transient Filter
• CMOS- and TTL-Compatible Enable Input
• Low 5-μA Standby Supply Current (Max)
• Available in 14-Pin SOIC and TSSOP Package
• –40°C to 85°C Ambient Temperature Range
• Electrostatic Discharge Protection

APPLICATIONS
• Hot-Swap/Plug/Dock Power Management
• Hot-Plug PCI, Device Bay
• Electronic Circuit Breaker

DESCRIPTION
The TPS2330 and TPS2331 are single-channel hot-swap controllers that use external N-channel MOSFETs as
high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP),
inrush-current control, output-power status reporting, and the ability to discriminate between load transients and
faults, are critical requirements for hot-swap applications.
The TPS2330/31 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the
device is off at start-up and confirm the status of the output voltage rails during operation. An internal charge
pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel
MOSFETs. The charge pump controls both the rise times and fall times (dV/dt) of the MOSFETs, reducing power
transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent
conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during
power-state transitions, to disregard transients for a programmable period.




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