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TLC252 Folha de dados (PDF) - Texas Instruments

TLC252 Datasheet PDF - Texas Instruments
Nome de Peças TLC252
Download  TLC252 Download
Tamanho do Arquivo   460.8 Kbytes
página   27 Pages
Fabricante Electrônico  TI2 [Texas Instruments]
Página de início  https://www.ti.com
Logo TI2 - Texas Instruments
Descrição Electrónicos LinCMOS DUAL OPERATIONAL AMPLIFIERS

TLC252 Datasheet (PDF)

Go To PDF Page Download Folha de dados
TLC252 Datasheet PDF - Texas Instruments

Nome de Peças TLC252
Download  TLC252 Click to download

Tamanho do Arquivo   460.8 Kbytes
página   27 Pages
Fabricante Electrônico  TI2 [Texas Instruments]
Página de início  https://www.ti.com
Logo TI2 - Texas Instruments
Descrição Electrónicos LinCMOS DUAL OPERATIONAL AMPLIFIERS

TLC252 Folha de dados (HTML) - Texas Instruments


TLC252 Detalhes do produto

A-Suffix Versions Offer 5-mV VIO
B-Suffix Versions Offer 2-mV VIO
Wide Range of Supply Voltages
1.4 V to 16 V
True Single-Supply Operation
Common-Mode Input Voltage Includes the
Negative Rail
Low Noise . . . 30 nV/√Hz Typ at f = 1 kHz
(High-Bias Versions)

description
The TLC252, TLC25L2, and TLC25M2 are
low-cost, low-power dual operational amplifiers
designed to operate with single or dual supplies.
These devices utilize the Texas Instruments
silicon gate LinCMOS process, giving them stable input offset voltages that are available in selected grades
of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents.
Because the input common-mode range extends to the negative rail and the power consumption is extremely
low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers
operation down to a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.




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