State-of-the-Art EPIC-IIBE BiCMOS Design
Significantly Reduces Power Dissipation
Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
High-Impedance State During Power Up
and Power Down
High-Drive Outputs (–32-mA IOH, 64-mA IOL)
Latch-Up Performance Exceeds 500 mA Per
JESD 17
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
Package Options Include Plastic
Small-Outline (DW), Shrink Small-Outline
(DB) Packages, and Thin Shrink
Small-Outline (PW), Ceramic Chip Carriers
(FK), Plastic (NT), and Ceramic (JT) DIPs

description
The ’ABT863 devices are 9-bit transceivers
designed for asynchronous communication
between data buses. The control-function
implementation allows for maximum flexibility in
timing.
These devices allow noninverted data
transmission from the A bus to the B bus or from
the B bus to the A bus, depending on the logic
levels at the output-enable (OEAB and OEBA)
inputs.
The outputs are in the high-impedance state
during power up and power down. The outputs
remain in the high-impedance state while the
device is powered down.
When VCC is between 0 and 2.1 V, the device is
in the high-impedance state during power up or
power down. However, to ensure the
high-impedance state above 2.1 V, OE should be
tied to VCC through a pullup resistor; the minimum
value of the resistor is determined by the
current-sinking capability of the driver.
The SN54ABT863 is characterized for operation over the full military temperature range of –55°C to 125°C.
The SN74ABT863 is characterized for operation from –40°C to 85°C.