BiCMOS Design Significantly Reduces ICCZ
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
High-Impedance State During Power Up
and Power Down
Open-Collector Outputs Drive Bus Lines
or Buffer-Memory Address Registers
Package Options Include Plastic
Small-Outline (DW) Packages and Standard
Plastic and Ceramic 300-mil DIPs (N)

description
This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state
memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The device provides
complementary output-enable (OE and OE) inputs and noninverting outputs.
The SN64BCT757 is characterized for operation from –40°C to 85°C and 0°C to 70°C.