Low rDS(on) . . . 0.09 W Typ at VGS = –10 V
3 V Compatible
Requires No External VCC
TTL and CMOS Compatible Inputs
VGS(th) = –1.5 V Max
Available in Ultrathin TSSOP Package (PW)
ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015

description
The TPS1101 is a single, low-rDS(on), P-channel,
enhancement-mode MOSFET. The device has
been optimized for 3-V or 5-V power distribution
in battery-powered systems by means of the
Texas Instruments LinBiCMOSE process. With a
maximum VGS(th) of –1.5 V and an IDSS of only
0.5 mA, the TPS1101 is the ideal high-side switch
for low-voltage, portable battery-management
systems where maximizing battery life is a primary
concern. The low rDS(on) and excellent ac
characteristics (rise time 5.5 ns typical) of the
TPS1101 make it the logical choice for
low-voltage switching applications such as power
switches for pulse-width-modulated (PWM)
controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or
TSSOP (PW) version fits in height-restricted
places where other P-channel MOSFETs cannot.
The size advantage is especially important where
board height restrictions do not allow for an
small-outline integrated circuit (SOIC) package.
Such applications include notebook computers,
personal digital assistants (PDAs), cellular
telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other
P-channel MOSFETs in SOIC packages.