Applications
• Electric vehicle BEV traction drives
• Hybrid electric vehicle PHEV traction drives
• Electric vehicle on-board and off-board chargers
Description
The SIC1181KQ and SIC1182KQ are single channel gate drivers for
SiC MOSFETs. Reinforced galvanic isolation is provided by Power
Integrations’ revolutionary solid insulator FluxLink technology. Up to
±8 A peak output drive current enables the product to drive devices
with nominal currents of up to 600 / 800 A (typical).
Additional features such as undervoltage lock-out (UVLO) for
primary-side and secondary-side and rail-to-rail output with temperature
and process compensated output impedance guarantee safe
operation even in harsh conditions.
Furthermore, this gate driver IC comes along with short-circuit protection
(at and during turn-on phase) as well as overvoltage limitation by AAC
advanced active clamping (at turn-off phase) through a single sensing
pin. For SIC MOSFET with current-sense terminal, an adjustable
over-current detection can be realized.