General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS.

Features
 Low VCE(sat) Trench IGBT technology
 10μs short circuit capability
 Low switching loss
 Maximum junction temperature 175oC
 Low inductance case
 VCE(sat) with positive temperature coefficient
 Fast & soft reverse recovery anti-parallel FWD
 Lead free package

Typical Applications
 Inverter for motor drive
 AC and DC servo drive amplifier
 Uninterruptible power supply