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STCV20700BY4V Folha de dados (PDF) - Innogration Technologies, Inc.
STCV20700BY4V Datasheet PDF - Innogration Technologies, Inc.
Nome de Peças STCV20700BY4V
Download  STCV20700BY4V Download
Tamanho do Arquivo   1644.07 Kbytes
página   8 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 700W,1.8-2.0GHz RF Power Transistor

STCV20700BY4V Datasheet (PDF)

Go To PDF Page Download Folha de dados
STCV20700BY4V Datasheet PDF - Innogration Technologies, Inc.

Nome de Peças STCV20700BY4V
Download  STCV20700BY4V Click to download

Tamanho do Arquivo   1644.07 Kbytes
página   8 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 700W,1.8-2.0GHz RF Power Transistor

STCV20700BY4V Folha de dados (HTML) - Innogration Technologies, Inc.


STCV20700BY4V Detalhes do produto

Description
The STCV20700BY4V is a 700-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 1.8-2.0GHz, enabled by wide band VBW capability to
support IBW up to 200MHz..
It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 100 to 115W
average power, according to normal 8 to 8.5dB back off.
There is no guarantee of performance when this part is used in applications designed
Outside of these frequencies.

Applications
 Asymmetrical Doherty amplifier within N3 5G band and B3 4G band
 L band power amplifier




Nº de peça semelhante - STCV20700BY4V

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Descrição semelhante - STCV20700BY4V

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