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STCV10700BY4 Folha de dados (PDF) - Innogration Technologies, Inc.

STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.
Nome de Peças STCV10700BY4
Download  STCV10700BY4 Download
Tamanho do Arquivo   1459.12 Kbytes
página   6 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Datasheet (PDF)

Go To PDF Page Download Folha de dados
STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.

Nome de Peças STCV10700BY4
Download  STCV10700BY4 Click to download

Tamanho do Arquivo   1459.12 Kbytes
página   6 Pages
Fabricante Electrônico  INNOGRATION [Innogration Technologies, Inc.]
Página de início  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Descrição Electrónicos Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Folha de dados (HTML) - Innogration Technologies, Inc.


STCV10700BY4 Detalhes do produto

Description
The STCV10700BY4 is a dual path 700watt capable, GaN HEMT, ideal for applications from 0.6 to 1GHz.
It can support CW, pulse or any modulated signal. It can be configured as push pull or Doherty.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV
 P band power amplifier




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