Features and Benefits:
■ Advanced trench MOSFET process technology
■ Special designed for PWM, load switching and
generalpurpose applications
■ Ultra low on-resistance with low gate charge
■ Fast switching and reverse body recovery
■ 150℃ operating temperature

Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications