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MS1226 Folha de dados (PDF) - Advanced Power Technology

MS1226 Datasheet PDF - Advanced Power Technology
Nome de Peças MS1226
Download  MS1226 Download
Tamanho do Arquivo   454.5 Kbytes
página   3 Pages
Fabricante Electrônico  ADPOW [Advanced Power Technology]
Página de início  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology
Descrição Electrónicos RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

MS1226 Datasheet (PDF)

Go To PDF Page Download Folha de dados
MS1226 Datasheet PDF - Advanced Power Technology

Nome de Peças MS1226
Download  MS1226 Click to download

Tamanho do Arquivo   454.5 Kbytes
página   3 Pages
Fabricante Electrônico  ADPOW [Advanced Power Technology]
Página de início  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology
Descrição Electrónicos RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

MS1226 Folha de dados (HTML) - Advanced Power Technology


MS1226 Detalhes do produto

DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.

Features
   30 MHz
   28 VOLTS
   IMD = -28 dB
   POUT = 30 WATTS
   GP = 18 dB MINIMUM
   COMMON EMITTER CONFIGURATION




Nº de peça semelhante - MS1226

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Microsemi Corporation
MS1226 MICROSEMI-MS1226 Datasheet
61Kb / 3P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
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Descrição semelhante - MS1226

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics
SD1407 STMICROELECTRONICS-SD1407 Datasheet
45Kb / 4P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Oct-1992
SD1411 STMICROELECTRONICS-SD1411 Datasheet
52Kb / 3P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Oct-1992
SD1487 STMICROELECTRONICS-SD1487 Datasheet
63Kb / 5P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Nov-1992
SD1730 STMICROELECTRONICS-SD1730 Datasheet
77Kb / 6P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
07-Sep-1994
logo
Microsemi Corporation
MS1226 MICROSEMI-MS1226 Datasheet
61Kb / 3P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
logo
Advanced Power Technolo...
MS1001 ADPOW-MS1001 Datasheet
118Kb / 3P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
MS1007 ADPOW-MS1007 Datasheet
161Kb / 4P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
MS1008 ADPOW-MS1008 Datasheet
185Kb / 5P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
logo
Microsemi Corporation
MS1076 MICROSEMI-MS1076 Datasheet
92Kb / 6P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
logo
STMicroelectronics
SD1726 STMICROELECTRONICS-SD1726_03 Datasheet
197Kb / 8P
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
January, 10 2003
More results




Sobre a Advanced Power Technology


Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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