GENERAL DESCRIPTION

The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input

and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C¹ 8750 W

Maximum Voltage and Current

Collector to Base Voltage (BVces) 65 V

Emitter to Base Voltage (BVebo) 4.5 V

Collector Current (Ic) 100 A

Maximum Temperatures

Storage Temperature  -65 to +200 °C

Operating Junction Temperature  +200 °C