General Description
Using NCE's proprietary high density trench gate design and advanced FS
(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior
conduction and switching performances, and easy parallel operation.

Features
 Trench field stop Gen.7 Technology Offering
 Low saturation voltage: VCEsat = 1.45V(Typ.) @ IC = 75 A
 High speed switching, low switching losses
 Maximum junction temperature Tvjmax = 175°C
 Tighten parameter distribution
 High ruggedness, temperature stable behavior
 Pb-free lead plating; RoHS compliant

Application
 PV power
 Three-level Solar String Inverter
 UPS