Description
The RM110N82T2 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.

General Features
VDS = 82V,ID =110A
RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation

Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Halogen-free