DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

FEATURES
• Input and output matching cell
   allows an easier design of circuits
• Diffused emitter ballasting resistors
   providing excellent current sharing
   and withstanding a high VSWR
• Interdigitated structure provides
   high emitter efficiency
• Gold metallization realizes very
   stable characteristics and excellent
   lifetime
• Multicell geometry gives good
   balance of dissipated power and
   low thermal resistance.

APPLICATIONS
   Common base class B power
   amplifiers at 1.6 GHz. Also suitable
   for operation in the frequency range
   1.4 to 1.8 GHz.